This work combines the disciplines of solid state physics, semiconductor physics, circuit engineering, nuclear physics, together with electronics and electromagnetic theory into a book that can be used as a text with problems at the end of the majority of the chapters. Coverage spans from a detailed description of the nuclear radiation sources to pertinent semiconductor physics, then to hardness assurance. This book is the first unified treatment of the analysis and design methods for protection of principally electronic systems from the deleterious effects of nuclear and electro-magnetic radiation. They are used to predict the performance of the device as an element of an electrical circuit. Electrical characteristics are measurable electrical properties of a device inherent in its design. Recommended operating conditions, however, do not carry the implication of device damage if they are exceeded. Recommended operating conditions have a similarity to maximum ratings in that operation outside the stated limits that could cause unsatisfactory performance. The selection of any op amp must be based on an understanding of the particular parameters that are most important to the application. There is no such thing as an ideal op amp or one that is universally applicable. It is merely an attempt to highlight the parameters of most interest to the designer who is using the part the way it was intended. The omission of information is not an attempt to “hide” anything.

An op amp that is intended only for ac applications may omit dc offset information. The designer must have a clear understanding of what op amp parameters mean and their impact on circuit design. This chapter deals with op amp data sheet parameters. Finally, even though power devices are especially sensitive to radiation damage, some of the tested devices are suitable for radiation levels on the order of - 1014 n ldr cm-2 in case the whole electronic system, in which the device is integrated, is carefully designed. These phenomena were explained from the special characteristics of the output stage, optimized to provide a current of several amperes. However, other phenomena were observed without equivalence in the family (linear dependence of the inverse of the quiescent current on the neutron fluence, more significant degradation of the negative output current and collapse of the primary operational amplifiers). These experiments showed that the degradation of the power operational amplifiers shares a great deal of characteristics with that of the low signal devices (e.g., shift of the input offset voltage, increase of the input bias currents, and degradation of the frequency behavior). Power operational amplifiers were irradiated in a mixed neutron and gamma radiation environment.

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